Description

High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
– parallel switching capability
– moderate Eoff increase with temperature
– very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1
for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE IC Eoff) Tj Marking Package
SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1
SGW30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V C E 600 V
DC collector current
TC = 25°C
TC = 100°C
I C
41
30
Pulsed collector current, tp limited by Tjmax I Cpuls 112
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
– 112
A
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25Ω
start TJ=25°C
EA S 165 mJ
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
V G E ±20
±30
V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
tS C 10 µs
Power dissipation
TC = 25°C
Ptot 250 W
Operating junction and storage temperature Tj ,
Tstg
-55…+150
Time limited operating junction temperature for t < 150h Tj(tl) 175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s – 260
°C